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ST72321xx-Auto Electrical characteristics
Doc ID 13829 Rev 1 199/243
19.6 Memory characteristics
19.6.1 RAM and hardware registers
19.6.2 Flash memory
Warning: Do not connect 12V to V
PP
before V
DD
is powered on, as this
may damage the device.
Table 120. RAM supply voltage
Symbol Parameter Conditions Min Typ Max Unit
V
RM
Data retention mode
(1)
1. Minimum V
DD
supply voltage without losing data stored in RAM (in Halt mode or under RESET) or in
hardware registers (only in Halt mode). Not tested in production.
Halt mode (or RESET) 1.6 V
Table 121. Dual voltage HDFlash memory
Symbol Parameter Conditions Min
(1)
1. Data based on characterization results, not tested in production
Typ Max
(1)
Unit
f
CPU
Operating frequency
Read mode 0 8
MHz
Write / Erase mode 1 8
V
PP
Programming voltage
(2)
2. V
PP
must be applied only during the programming or erasing operation and not permanently for reliability
reasons.
4.5V < V
DD
< 5.5V 11.4 12.6 V
I
DD
Supply current
(3)
3. Data based on simulation results, not tested in production
Run mode (f
CPU
= 4 MHz) 3
mA
Write / Erase 0
Power down mode / HALT 1 10
µA
I
PP
V
PP
current
(3)
Read (V
PP
= 12V) 200
Write / Erase 30 mA
t
VPP
Internal V
PP
stabilization
time
10 µs
t
RET
Data retention T
A
=55°C 20 years
N
RW
Write erase cycles T
A
= 85°C 100 cycles
T
PROG
T
ERASE
Programming or erasing
temperature range
-40 25 85 °C
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